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Product Data Sheet
6 - 18 GHz Phase Shifter
TGP6336-EEU
Key Features and Performance
* * * * * * 6 to 18 GHz Frequency Range 5-Bit Phase Shifter On-Chip CMOS-Compatible Drivers 9 dB Typical Insertion Loss at Midband 2:1 Typical Input SWR: 2.6:1 Typical Output SWR 3.556 x 2.540 x 0.1016 mm (0.140 x 0.100 x 0.004 in.)
Description
The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase shifter which operates from 6 to 18 GHz. Phase can be shifted from 0 to 348.75 degrees in 11.25 degree steps. Control bias voltages are 0 and 5 V. The insertion loss is typically 9 dB. The TGP6336-EEU features on-chip CMOS-compatible drivers. The FET based phase shifter offers wide band performance and small size for use in T/R modules for EW applications. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. Ground is provided to the circuitry through vias to the backside metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGP6336-EEU
TYPICAL RELATIVE PHASE
TYPICAL INSERTION LOSS
TYPICAL INPUT RETURN LOSS
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGP6336-EEU
TYPICAL OUTPUT RETURN LOSS
ABSOLUTE MAXIMUM RATINGS
Positive supply voltage, V+............................................................................................... 8 V Positive supply voltage range w ith respect to negative supply voltage, V+ - V-............................ 0 V to 12 V Negative supply voltage range, V-...................................................................................... 0 V to -6 V Input continuous w ave pow er, PIN....................................................................................... W 1 Control voltage range, SHF 90, SHF180, SHF11.25, SHF 22.5, SHF 45...................................... 0 V to V+ Operating Channel temperature, TCH *..................................................................................150oC Mounting temperature (30 sec.), TM.....................................................................................320oC Storage temperature range, TSTG........................................................................................-65 to 150oC Ratings over operating channel temperature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * Operating channel temperature (TCH) w ill directly affect the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGP6336-EEU
BIAS TRUTH TABLE
RELATIVE SHF 180 SHF 90 SHF 45 SHF 22.5 SHF 11.25 PHASE SHIFT (Bond pad #10) (Bond pad #11 (Bond pad #7) (Bond pad #8) (Bond pad #9) (degrees) 0.00 5 5 5 5 5 -11.25 5 5 5 5 0 -22.50 5 5 5 0 5 -33.75 5 5 5 0 0 -45.00 5 5 0 5 5 -56.25 5 5 0 5 0 -67.50 5 5 0 0 5 -78.75 5 5 0 0 0 -90.00 5 0 5 5 5 -101.25 5 0 5 5 0 -112.50 5 0 5 0 5 -123.75 5 0 5 0 0 -135.00 5 0 0 5 5 -146.25 5 0 0 5 0 -157.50 5 0 0 0 5 -168.75 5 0 0 0 0 -180.00 0 5 5 5 5 -191.25 0 5 5 5 0 -202.50 0 5 5 0 5 -213.75 0 5 5 0 0 -225.00 0 5 0 5 5 -236.25 0 5 0 5 0 -247.50 0 5 0 0 5 -258.75 0 5 0 0 0 -270.00 0 0 5 5 5 -281.25 0 0 5 5 0 -292.50 0 0 5 0 5 -303.75 0 0 5 0 0 -315.00 0 0 0 5 5 -326.25 0 0 0 5 0 -337.50 0 0 0 0 5 -348.75 0 0 0 0 0
V+ = 6 V, V- = -5 V, TA = 25oC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGP6336-EEU
RF CHARACTERISTICS
PARAMETER IL SWR(in) P1dB(in) Insertion loss (all states) Input standing w ave ratio Input pow er at 1-dB gain compression
TEST CONDITIONS f = 6 - 18 GHz f = 6 - 18 GHz (all states) f = 6 - 18 GHz (all states)
TYP 9 2.0:1 2.6:1
UNIT dB -
SWR(out) Output standing w ave ratio
see next table
PHASE SHIFT (degrees) -11.25 -22.5 -45 -90 -180 -348.75
TYPICAL RELATIVE PHASE SHIFT at 6GHz (degrees) -132 -232 -554 -1075 -2144 -4168 at 12GHz (degrees) -13.52 -232 -433 -847 -1658 -3269 at 18GHz (degrees) 134 324 587 998 18616 38011
TYPICAL INPUT POWER at 1-dB GAIN COMPRESSION at MIDBAND(dBm) 26 27 26 25 25 25
V+ = 6 V, V- = -5 V, TA = 25oC
RECOMMENDED BIAS NETWORK
All bias resistors have a nominal value of 25-Ohms. RF connections: Bond one 1-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential for resonant-free performance. Refer to TriQuint's Gallium Arsenide Products Designers' Information on our website under Application Information.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGP6336-EEU
FUNCTIONAL BLOCK DIAGRAM
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGP6336-EEU
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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